QPD1881L

Mfr.Part #
QPD1881L
Manufacturer
Qorvo
Package/Case
NI780-2
Datasheet
Download
Description
RF JFET Transistors Radar version of QPD2795 (2.7-2.9GHz 360

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Manufacturer :
Qorvo
Product Category :
RF JFET Transistors
Gain :
21.2 dB
Id - Continuous Drain Current :
13 A
Maximum Drain Gate Voltage :
55 V
Maximum Operating Temperature :
+ 85 C
Minimum Operating Temperature :
- 40 C
Mounting Style :
SMD/SMT
Operating Frequency :
2.7 GHz to 2.9 GHz
Package / Case :
NI780-2
Pd - Power Dissipation :
237 W
Technology :
GaN-on-SiC
Transistor Polarity :
N-Channel
Transistor Type :
HEMT
Vds - Drain-Source Breakdown Voltage :
145 V
Vgs - Gate-Source Breakdown Voltage :
- 7 V to 2 V
Datasheets
QPD1881L

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