QPD1017

Mfr.Part #
QPD1017
Manufacturer
Qorvo
Package/Case
17.4 mm x 24 mm x 4.31 mm
Datasheet
Download
Description
RF JFET Transistors QPD1017 3.1-3.5GHz 500W IMFET - Pkg

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Manufacturer :
Qorvo
Product Category :
RF JFET Transistors
Gain :
15.7 dB
Id - Continuous Drain Current :
20 A
Maximum Drain Gate Voltage :
55 V
Maximum Operating Temperature :
+ 85 C
Minimum Operating Temperature :
- 40 C
Mounting Style :
SMD/SMT
Operating Frequency :
3.1 GHz to 3.5 GHz
Output Power :
460 W
Package / Case :
17.4 mm x 24 mm x 4.31 mm
Pd - Power Dissipation :
511 W
Technology :
GaN-on-SiC
Transistor Polarity :
N-Channel
Transistor Type :
HEMT
Datasheets
QPD1017

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