DF100R07W1H5FPB53BPSA2

Manufacturer :

Infineon Technologies

Product Category :

IGBT Modules

Collector- Emitter Voltage VCEO Max :

650 V

Collector-Emitter Saturation Voltage :

1.35 V

Configuration :

Dual

Continuous Collector Current at 25 C :

40 A

Gate-Emitter Leakage Current :

100 nA

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 40 C

Package / Case :

Module

Packaging :

Tray

Pd - Power Dissipation :

20 mW

Product :

IGBT Silicon Carbide Modules