CM200DY-12NF

Manufacturer :

Mitsubishi Electric

Product Category :

IGBT Modules

Collector- Emitter Voltage VCEO Max :

600 V

Collector-Emitter Saturation Voltage :

1.7 V

Configuration :

Dual

Continuous Collector Current at 25 C :

200 A

Gate-Emitter Leakage Current :

0.5 uA

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 40 C

Pd - Power Dissipation :

650 W

Product :

IGBT Silicon Modules