RJP65T43DPM-00#T1

Manufacturer :

Renesas Electronics

Product Category :

IGBT Transistors

Collector- Emitter Voltage VCEO Max :

650 V

Collector-Emitter Saturation Voltage :

1.8 V

Configuration :

Single

Continuous Collector Current at 25 C :

40 A

Maximum Gate Emitter Voltage :

30 V

Maximum Operating Temperature :

+ 175 C

Mounting Style :

Through Hole

Package / Case :

TO-3PFM

Packaging :

Tube

Pd - Power Dissipation :

68.8 W

Technology :

SI