- Manufacturer :
- UnitedSiC
- Product Category :
- JFET
- Configuration :
- Single
- Id - Continuous Drain Current :
- 63 A
- Maximum Operating Temperature :
- + 175 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- Through Hole
- Package / Case :
- TO-247-3
- Packaging :
- Tube
- Pd - Power Dissipation :
- 429 W
- Rds On - Drain-Source Resistance :
- 35 mOhms
- Series :
- UJ3N
- Technology :
- SiC
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 1200 V
- Vgs - Gate-Source Breakdown Voltage :
- 20 V
- Datasheets
- UJ3N120035K3S
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UnitedSiCSchottky Diodes & Rectifiers 650V/12A SiC SCHOTTKY DIODE G3, TO-220-2L, ENHANCED SURGE
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Catalog related products
Related products
Part | Manufacturer | Stock | Description |
---|---|---|---|
UJ3N065025K3S | UnitedSiC | 666 | JFET 650V/25mOhm, SiC, N-ON JFET, G3, TO-247-3L, REDUCED Rth |
UJ3N065080K3S | UnitedSiC | 1,324 | JFET 650V/80mOhm, SiC, N-ON JFET, G3, TO-247-3L, REDUCED Rth |
UJ3N120065K3S | UnitedSiC | 61 | JFET 1200V/65mOhm SiC Planar JFET, N-ON G3, TO-247-3L |
UJ3N120070K3S | UnitedSiC | 940 | JFET 1200V/70mOhm, SiC, N-ON JFET, G3, TO-247-3L, REDUCED Rth |