IMW65R083M1HXKSA1

Manufacturer :

Infineon Technologies

Product Category :

MOSFET

Channel Mode :

Enhancement

Id - Continuous Drain Current :

24 A

Maximum Operating Temperature :

+ 175 C

Minimum Operating Temperature :

- 55 C

Mounting Style :

Through Hole

Number of Channels :

1 Channel

Package / Case :

TO-247-3

Packaging :

Tube

Pd - Power Dissipation :

104 W

Qg - Gate Charge :

19 nC

Rds On - Drain-Source Resistance :

111 mOhms

Technology :

SiC

Transistor Polarity :

N-Channel

Vds - Drain-Source Breakdown Voltage :

650 V

Vgs - Gate-Source Voltage :

- 5 V, + 23 V

Vgs th - Gate-Source Threshold Voltage :

5.7 V