IMZA65R057M1HXKSA1

Mfr.Part #
IMZA65R057M1HXKSA1
Manufacturer
Infineon Technologies
Package/Case
TO-247-4
Datasheet
Download
Description
MOSFET SILICON CARBIDE MOSFET

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Manufacturer :
Infineon Technologies
Product Category :
MOSFET
Channel Mode :
Enhancement
Id - Continuous Drain Current :
35 A
Maximum Operating Temperature :
+ 175 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
Through Hole
Number of Channels :
1 Channel
Package / Case :
TO-247-4
Packaging :
Tube
Pd - Power Dissipation :
133 W
Qg - Gate Charge :
28 nC
Rds On - Drain-Source Resistance :
74 mOhms
Technology :
SiC
Transistor Polarity :
N-Channel
Vds - Drain-Source Breakdown Voltage :
650 V
Vgs - Gate-Source Voltage :
- 5 V, + 23 V
Vgs th - Gate-Source Threshold Voltage :
5.7 V
Datasheets
IMZA65R057M1HXKSA1

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