IPZA65R018CFD7XKSA1
- Mfr.Part #
- IPZA65R018CFD7XKSA1
- Manufacturer
- Infineon Technologies
- Package/Case
- TO-247-4
- Datasheet
- Download
- Description
- MOSFET HIGH POWER_NEW
Request A Quote(RFQ)
- * Contact Name:
- * Company:
- * E-Mail:
- * Phone:
- * Comment:
- * Captcha:
-
- Manufacturer :
- Infineon Technologies
- Product Category :
- MOSFET
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 106 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- Through Hole
- Number of Channels :
- 1 Channel
- Package / Case :
- TO-247-4
- Packaging :
- Tube
- Pd - Power Dissipation :
- 446 W
- Qg - Gate Charge :
- 234 nC
- Rds On - Drain-Source Resistance :
- 18 mOhms
- Technology :
- SI
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 700 V
- Vgs - Gate-Source Voltage :
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage :
- 4.5 V
- Datasheets
- IPZA65R018CFD7XKSA1
Manufacturer related products
Catalog related products
Related products
Part | Manufacturer | Stock | Description |
---|---|---|---|
IPZA60R024P7XKSA1 | Infineon Technologies | 702 | MOSFET HIGH POWER_NEW |
IPZA60R037P7XKSA1 | Infineon Technologies | 1,304 | MOSFET HIGH POWER_NEW |
IPZA60R045P7XKSA1 | Infineon Technologies | 366 | MOSFET HIGH POWER_NEW |
IPZA60R060P7 | INFINEON | 13,481 | New original |
IPZA60R060P7XKSA1 | Infineon Technologies | 1,366 | MOSFET HIGH POWER_NEW |
IPZA60R099P7XKSA1 | Infineon Technologies | 512 | MOSFET HIGH POWER_NEW |
IPZA60R120P7XKSA1 | Infineon Technologies | 277 | MOSFET HIGH POWER_NEW |
IPZA60R180P7XKSA1 | Infineon Technologies | 736 | MOSFET HIGH POWER_NEW |
IPZA65R029CFD7XKSA1 | Infineon Technologies | 44 | MOSFET HIGH POWER_NEW |