IMZA65R030M1HXKSA1

Mfr.Part #
IMZA65R030M1HXKSA1
Manufacturer
Infineon Technologies
Package/Case
TO-247-4
Datasheet
Download
Description
MOSFET SILICON CARBIDE MOSFET

Request A Quote(RFQ)

* Contact Name:
* Company:
* E-Mail:
* Phone:
* Comment:
* Captcha:
loading...
Manufacturer :
Infineon Technologies
Product Category :
MOSFET
Channel Mode :
Enhancement
Id - Continuous Drain Current :
53 A
Maximum Operating Temperature :
+ 175 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
Through Hole
Number of Channels :
1 Channel
Package / Case :
TO-247-4
Packaging :
Tube
Pd - Power Dissipation :
197 W
Qg - Gate Charge :
48 nC
Rds On - Drain-Source Resistance :
42 mOhms
Technology :
SiC
Transistor Polarity :
N-Channel
Vds - Drain-Source Breakdown Voltage :
650 V
Vgs - Gate-Source Voltage :
- 5 V, + 23 V
Vgs th - Gate-Source Threshold Voltage :
5.7 V
Datasheets
IMZA65R030M1HXKSA1

Manufacturer related products

Catalog related products

Related products

Part Manufacturer Stock Description
IMZA65R027M1HXKSA1 Infineon Technologies 1,117 MOSFET SILICON CARBIDE MOSFET
IMZA65R039M1HXKSA1 Infineon Technologies 713 MOSFET SILICON CARBIDE MOSFET
IMZA65R048M1HXKSA1 Infineon Technologies 492 MOSFET SILICON CARBIDE MOSFET
IMZA65R057M1HXKSA1 Infineon Technologies 685 MOSFET SILICON CARBIDE MOSFET
IMZA65R072M1HXKSA1 Infineon Technologies 845 MOSFET SILICON CARBIDE MOSFET
IMZA65R083M1HXKSA1 Infineon Technologies 713 MOSFET SILICON CARBIDE MOSFET
IMZA65R107M1HXKSA1 Infineon Technologies 929 MOSFET SILICON CARBIDE MOSFET