SIHA105N60EF-GE3

Mfr.Part #
SIHA105N60EF-GE3
Manufacturer
Vishay / Siliconix
Package/Case
-
Datasheet
Download
Description
MOSFET E Series Pwr MOSFET w/Fast Body Diode

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Manufacturer :
Vishay / Siliconix
Product Category :
MOSFET
Channel Mode :
Enhancement
Id - Continuous Drain Current :
29 A
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
Through Hole
Number of Channels :
1 Channel
Packaging :
Cut Tape, MouseReel, Reel
Pd - Power Dissipation :
35 W
Qg - Gate Charge :
35 nC
Rds On - Drain-Source Resistance :
100 mOhms
Technology :
SI
Transistor Polarity :
N-Channel
Vds - Drain-Source Breakdown Voltage :
600 V
Vgs - Gate-Source Voltage :
- 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage :
5 V
Datasheets
SIHA105N60EF-GE3

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