E3M0120090J
- Mfr.Part #
- E3M0120090J
- Manufacturer
- Wolfspeed / Cree
- Package/Case
- TO-263-7
- Datasheet
- Download
- Description
- MOSFET 900V 120mOHMS SiC MOSFET AUTO AECQ101
Request A Quote(RFQ)
- * Contact Name:
- * Company:
- * E-Mail:
- * Phone:
- * Comment:
- * Captcha:
-
- Manufacturer :
- Wolfspeed / Cree
- Product Category :
- MOSFET
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 23 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 1 Channel
- Package / Case :
- TO-263-7
- Packaging :
- Tube
- Pd - Power Dissipation :
- 97 W
- Qg - Gate Charge :
- 17.3 nC
- Qualification :
- AEC-Q101
- Rds On - Drain-Source Resistance :
- 120 mOhms
- Technology :
- SiC
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 900 V
- Vgs - Gate-Source Voltage :
- - 8 V, + 18 V
- Vgs th - Gate-Source Threshold Voltage :
- 2.1 V
- Datasheets
- E3M0120090J
Manufacturer related products
-
-
-
-
-
Wolfspeed / CreePower Management IC Development Tools CAB FM3 Double Pulse Dynamic Eval
Catalog related products
Related products
Part | Manufacturer | Stock | Description |
---|---|---|---|
E3M0075120D | Wolfspeed / Cree | 1,301 | MOSFET 1.2kV 75mOHMS E3M AUTO AECQ101 |
E3M0075120K | Wolfspeed / Cree | 1,301 | MOSFET 1.2kV 75mOHMS E3M AUTO AECQ101 |
E3M0120090J-TR | Wolfspeed / Cree | 41 | MOSFET Gen 3 900V 120 mO SiC MOSFET |