GS-065-011-1-L
- Mfr.Part #
- GS-065-011-1-L
- Manufacturer
- GaN Systems
- Package/Case
- PDFN-6
- Datasheet
- Download
- Description
- MOSFET 650V, 11A, GaN E-HEMT, 5x6 PDFN, Bottom-side cooled
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- Manufacturer :
- GaN Systems
- Product Category :
- MOSFET
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 11 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 40 C
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 1 Channel
- Package / Case :
- PDFN-6
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- -
- Qg - Gate Charge :
- 2 NC
- Rds On - Drain-Source Resistance :
- 150 mOhms
- Technology :
- GaN-on-Si
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 650 V
- Vgs - Gate-Source Voltage :
- - 10 V, + 7 V
- Vgs th - Gate-Source Threshold Voltage :
- 1.5 V
- Datasheets
- GS-065-011-1-L
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