TP65H015G5WS
- Mfr.Part #
- TP65H015G5WS
- Manufacturer
- Transphorm
- Package/Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET GAN FET 650V 95A TO2 47
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- Manufacturer :
- Transphorm
- Product Category :
- MOSFET
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 95 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- Through Hole
- Number of Channels :
- 1 Channel
- Package / Case :
- TO-247-3
- Packaging :
- Bulk
- Pd - Power Dissipation :
- 276 W
- Qg - Gate Charge :
- 68 nC
- Rds On - Drain-Source Resistance :
- 18 mOhms
- Technology :
- GaN
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 650 V
- Vgs - Gate-Source Voltage :
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage :
- 4 V
- Datasheets
- TP65H015G5WS
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