TP65H070LDG-TR
- Mfr.Part #
- TP65H070LDG-TR
- Manufacturer
- Transphorm
- Package/Case
- PQFN-8
- Datasheet
- Download
- Description
- RF JFET Transistors 227-TP65H070LSG-TR
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- Manufacturer :
- Transphorm
- Product Category :
- RF JFET Transistors
- Id - Continuous Drain Current :
- 25 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Package / Case :
- PQFN-8
- Packaging :
- Reel
- Pd - Power Dissipation :
- 96 W
- Technology :
- GaN
- Transistor Polarity :
- N-Channel
- Transistor Type :
- HEMT
- Vds - Drain-Source Breakdown Voltage :
- 650 V
- Vgs - Gate-Source Breakdown Voltage :
- - 20 V, + 20 V
- Datasheets
- TP65H070LDG-TR
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